t rench g en f et tm maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (1) i d 50 a pulsed drain current i dm 100 maximum power dissipation t c = 25? p d 62.5 w t c = 100? 25 operating junction and storage temperature range t j , t stg ?5 to 150 ? lead temperature (1/8?from case for 5 sec.) t l 275 ? junction-to-case r jc 2.0 ?/w junction-to-ambient (pcb mounted) r ja 40 ?/w note: (1) surface mounted on fr4 board, t 10 sec. GFP50N03 n-channel enhancement-mode mosfet v ds 30v r ds(on) 13 m ? i d 50a 6/20/00 features ?dynamic dv/dt rating ?repetitive avalanche rated ?175? operating temperature ?ease of paralleling ?fast switching for high efficiency ?simple drive requirements mechanical data case: jedec to-220ab molded plastic body terminals: leads solderable per mil-std-750, method 2026 mounting torque: 10 in-lbs maximum weight: 2.0g 0.154 (3.91) 0.142 (3.60) dia. 0.560 (14.22) 0.530 (13.46) gds 1.148 (29.16) 1.118 (28.40) 0.022 (0.56) 0.014 (0.36) 0.113 (2.87) 0.102 (2.56) 0.205 (5.20) 0.190 (4.83) 0.360 (9.14) 0.330 (8.38) pin 0.415 (10.54) max. 0.105 (2.67) 0.095 (2.41) d 0.155 (3.93) 0.134 (3.40) 0.635 (16.13) 0.580 (14.73) 0.410 (10.41) 0.350 (8.89) 0.160 (4.06) 0.09 (2.28) 0.037 (0.94) 0.026 (0.66) 0.603 (15.32) 0.573 (14.55) 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) 0.104 (2.64) 0.094 (2.39) * may be notched or flat * dimensions in inches and (millimeters) to-220ab g d s new product
electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 gate-body leakage i gss v ds = 0v, v gs = 20v 100 na zero gate voltage drain current i dss v ds = 30v, v gs = 0v 1 a on-state drain current (1) i d(on) v ds 5v, v gs = 10v 60 a drain-source on-state resistance (1) r ds(on) v gs = 10v, i d = 25a 11 13 m ? v gs = 4.5v, i d = 20a 15 20 forward transconductance (1) g fs v ds = 10v, i d = 25a 40 s diode forward voltage v sd i s = 25a, v gs = 0v 0.9 1.3 v dynamic (1) total gate charge q g 35 60 gate-source charge q gs v ds = 15v, v gs = 10v 8nc gate-drain charge q gd i d = 50a 6 turn-on delay time t d(on) 11 20 rise time t r v dd = 15v, r l = 15 ? 11 20 turn-off delay time t d(off) i d 1a, v gen = 10v 48 80 ns fall time t f r g = 6 ? 15 30 source-drain reverse recovery time t rr i f = 25a, di/dt = 100a/ s 160 note: (1) pulse test; pulse width 300 s, duty cycle 2% g d s v in v dd v gs r gen r l v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms GFP50N03 n-channel enhancement-mode mosfet
0 20 40 80 012345 fig. 1 ?output characteristics i d -- drain source current (a) v ds -- drain-to-source voltage (v) 0 0.01 0.015 0.005 0.02 0.025 0.03 0 20 40 60 80 100 fig. 4 ?on-resistance vs. drain current r ds(on) -- on-resistance ( ? ) i d -- drain current (a) 0 10 20 40 30 50 60 12345 fig. 2 ?transfer characteristics i d -- drain current (a) 60 2.5v 0.6 1.2 1.4 1.6 0.8 1 -- 50 -- 25 25 50 75 100 125 150 0 r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) fig. 5 ?on-resistance vs. junction temperature v gs = 10v i d = 25a 6.0v 10v t j = 125 c --55 c 3.0v 4.0v 4.5v 3.5v 5.0v 25 c v ds = 10v v gs = 4.5v v gs -- gate-to-source voltage (v) 0.8 0.6 1 1.2 1.4 1.6 1.8 -- 50 -- 25 25 50 75 100 125 150 0 v gs(th) -- threshold voltage (v) t j -- junction temperature ( c) fig. 3 ?threshold voltage vs. temperature i d = 250 a 0 0.005 0.01 0.02 0.03 0.04 0.015 0.025 0.035 246810 fig. 6 ?on-resistance vs. gate-to-source voltage r ds(on) -- on-resistance ( ? ) v gs -- gate-to-source voltage (v) i d = 25a t j = 125 c 25 c 5v v gs =10v GFP50N03 n-channel enhancement-mode mosfet ratings and characteristic curves (t a = 25 c unless otherwise noted)
0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 i s -- source current (a) v sd -- source-to-drain voltage (v) 37 36 38 40 41 42 43 44 39 -- 50 -- 25 0 25 50 75 100 120 150 fig. 10 breakdown voltage vs. temperature bv dss -- breakdown voltafge (v) t j -- junction temperature ( c) i d = 250 a t j = 125 c --55 c 25 c v gs = 0v fig. 9 source-drain diode forward voltage 0 2 4 6 8 10 010203035 q g -- total gate charge (nc) fig. 7 gate charge v gs -- gate-to-source voltage (v) v ds = 15v i d = 25a 0 500 1000 1500 2000 2500 0 5 10 15 30 20 25 c -- capacitance (pf) v ds -- drain-to-source voltage (v) c iss c oss c rss fig. 8 capacitance f = 1mhz v gs = 0v GFP50N03 n-channel enhancement-mode mosfet ratings and characteristic curves (t a = 25 c unless otherwise noted)
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